SUD50P06-15L-E3 VISHAY/SILICONIX TO-252-3 Transistors

SUD50P06-15L-E3
  • SUD50P06-15L-E3

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  • Part Number
  • SUD50P06-15L-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-3
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The SUD50P06-15L-E3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-50A; On-Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:Yes,MOSFET P-CH 60V 50A. The SUD50P06-15L-E3 is P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak) MOSFET P-CH 60V 50A. More details for SUD50P06-15L-E3 can be seen below.

Details

P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak)
MOSFET P-CH 60V 50A
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SUD50P06-15L-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 24 - Apr 29 (Choose Expedited Shipping)
EDA / CAD Models
SUD50P06-15L-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 60 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
15 ns
Typical Turn Off Delay Time
175 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
TO-252, (D-Pak)
Series
TrenchFETR
Rise Time
70 ns
Rds On Max Id Vgs
15 mOhm @ 17A, 10V
Rds On Drain Source Resistance
15 mOhms
Power Max
3W
Pd Power Dissipation
136 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 175°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Input Capacitance Ciss Vds
4950pF @ 25V
Id Continuous Drain Current
50 A
Gate Charge Qg Vgs
165nC @ 10V
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
175 ns
Drain to Source Voltage Vdss
60V
Current Continuous Drain Id 25°C
50A (Tc)
Configuration
Single
Channel Mode
Enhancement

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