SIS412DN-T1-GE3 VISHAY/SILICONIX QFN-8 Transistors

SIS412DN-T1-GE3
  • SIS412DN-T1-GE3

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  • Part Number
  • SIS412DN-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • IC Chips
  • Package
  • QFN-8
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The SIS412DN-T1-GE3 from VISHAY/SILICONIX manufacturer is a IC Chips with MOSFET 30V 12A 15.6W. The SIS412DN-T1-GE3 is N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK? 1212-8 Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R MOSFET 30V 12A 15.6W. More details for SIS412DN-T1-GE3 can be seen below.

Details

N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK? 1212-8
Trans MOSFET N-CH 30V 8.7A 8-Pin PowerPAK 1212 T/R
MOSFET 30V 12A 15.6W
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SIS412DN-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 30 - May 05 (Choose Expedited Shipping)
EDA / CAD Models
SIS412DN-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.5V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
30 V
Typical Turn On Delay Time
15 ns
Typical Turn Off Delay Time
15 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
PowerPAKR 1212-8
Series
TrenchFETR
Rise Time
12 ns
Rds On Max Id Vgs
24 mOhm @ 7.8A, 10V
Rds On Drain Source Resistance
24 mOhms
Power Max
15.6W
Pd Power Dissipation
3.2 W
Part Aliases
SIS412DN-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR 1212-8
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
435pF @ 15V
Id Continuous Drain Current
12 A
Gate Charge Qg Vgs
12nC @ 10V
Forward Transconductance Min
17 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
10 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
12A (Tc)
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement

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