SIA416DJ-T1-GE3 VISHAY SILICONIX SC-70-6 MOS Field Effect Transistors

SIA416DJ-T1-GE3
  • SIA416DJ-T1-GE3

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  • Part Number
  • SIA416DJ-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • MOS Field Effect Transistors
  • Package
  • SC-70-6
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The SIA416DJ-T1-GE3 from VISHAY SILICONIX manufacturer is a MOS Field Effect Transistors with MOSFET N-CH 100V 11.3A SC70-6L. The SIA416DJ-T1-GE3 is N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK? SC-70-6 Single Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R MOSFET 100V 83mOhm@10V 11.3A N-Ch MV T-FET. More details for SIA416DJ-T1-GE3 can be seen below.

Details

N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK? SC-70-6 Single
Trans MOSFET N-CH 100V 4.8A 6-Pin PowerPAK SC-70 T/R
MOSFET 100V 83mOhm@10V 11.3A N-Ch MV T-FET
Categories
MOS Field Effect Transistors
Manufacturer
VISHAY SILICONIX
Veswin Part Number
V107110-SIA416DJ_T1_GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 25 - Apr 30 (Choose Expedited Shipping)
EDA / CAD Models
SIA416DJ-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs th Gate Source Threshold Voltage
3 V
Vgs Gate Source Voltage
3 V
Vds Drain Source Breakdown Voltage
100 V
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Tradename
ThunderFET TrenchFET
Technology
Si
Supplier Device Package
PowerPAKR SC-70-6 Single
Series
TrenchFETR
Rds On Max Id Vgs
83 mOhm @ 3.2A, 10V
Rds On Drain Source Resistance
83 mOhms
Qg Gate Charge
3.5 nC
Power Max
19W
Pd Power Dissipation
19 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
PowerPAKR SC-70-6
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
295pF @ 50V
Id Continuous Drain Current
11.3 A
Gate Charge Qg Vgs
10nC @ 10V
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
100V
Current Continuous Drain Id 25°C
11.3A (Tc)
Configuration
Single

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