SI4599DY-T1-GE3 VISHAY/SILICONIX SOIC-8 MOS Drive

SI4599DY-T1-GE3
  • SI4599DY-T1-GE3

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  • Part Number
  • SI4599DY-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Arrays
  • Package
  • SOIC-8
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The SI4599DY-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET 40/40V 5.3/11.8A 3.0/3.1W. The SI4599DY-T1-GE3 is Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R MOSFET 40/40V 5.3/11.8A 3.0/3.1W. More details for SI4599DY-T1-GE3 can be seen below.

Details

Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO
Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R
MOSFET 40/40V 5.3/11.8A 3.0/3.1W
Categories
MOS Drive
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V7583-SI4599DY-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 25 - Apr 30 (Choose Expedited Shipping)
EDA / CAD Models
SI4599DY-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
40 V
Unit Weight
0.019048 oz
Typical Turn On Delay Time
16 ns 44 ns
Typical Turn Off Delay Time
16 ns 30 ns
Transistor Type
1 N-Channel 1 P-Channel
Transistor Polarity
N-Channel P-Channel
Technology
Si
Supplier Device Package
8-SO
Series
TrenchFETR
Rise Time
17 ns 33 ns
Rds On Max Id Vgs
35.5 mOhm @ 5A, 10V
Rds On Drain Source Resistance
29.5 mOhms 37 mOhms
Power Max
3W, 3.1W
Pd Power Dissipation
2 W
Part Aliases
SI4599DY-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-SOIC (0.154", 3.90mm Width)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
640pF @ 20V
Id Continuous Drain Current
5.6 A
Gate Charge Qg Vgs
20nC @ 10V
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Fall Time
10 ns 13 ns
Drain to Source Voltage Vdss
40V
Current Continuous Drain Id 25°C
6.8A, 5.8A
Configuration
Dual Dual Drain
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the SI4599DY-T1-GE3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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