SI1401EDH-T1-GE3 VISHAY/SILICONIX SOT-363 Transistors

SI1401EDH-T1-GE3
  • SI1401EDH-T1-GE3

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  • Part Number
  • SI1401EDH-T1-GE3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Single
  • Package
  • SOT-363
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The SI1401EDH-T1-GE3 from VISHAY/SILICONIX manufacturer is a FETs - Single with MOSFET P-CH 12V 4A SC-70-6. The SI1401EDH-T1-GE3 is P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363) Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R MOSFET -12V [email protected] 4A P-Ch G-III. More details for SI1401EDH-T1-GE3 can be seen below.

Details

P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)
Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R
MOSFET -12V [email protected] 4A P-Ch G-III
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI1401EDH-T1-GE3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 25 - Apr 30 (Choose Expedited Shipping)
EDA / CAD Models
SI1401EDH-T1-GE3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 250μA
Vgs th Gate Source Threshold Voltage
- 1 V
Vgs Gate Source Voltage
10 V
Vds Drain Source Breakdown Voltage
- 12 V
Unit Weight
0.000265 oz
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
SC-70-6 (SOT-363)
Series
TrenchFETR
Rds On Max Id Vgs
34 mOhm @ 5.5A, 4.5V
Rds On Drain Source Resistance
34 mOhms
Qg Gate Charge
24 nC
Power Max
2.8W
Pd Power Dissipation
2.8 W
Part Aliases
SI1401EDH-GE3
Packaging
Digi-ReelR Alternate Packaging
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
-
Id Continuous Drain Current
- 4 A
Gate Charge Qg Vgs
36nC @ 8V
Forward Transconductance Min
16 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
12V
Current Continuous Drain Id 25°C
4A (Tc)
Configuration
Single

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