The NGB8206ANSL3G from ON manufacturer is a IGBTs - Single with IGBT Transistors IGBT 20A 350V N-CHANNEL.
The NGB8206ANSL3G is IGBT 390V 20A 150W Surface Mount D2PAK Trans IGBT Chip N-CH 390V 20A 150000mW 3-Pin(2+Tab) D2PAK Tube IGBT Transistors IGBT 20A 350V N-CHANNEL. More details for NGB8206ANSL3G can be seen below.
Details
IGBT 390V 20A 150W Surface Mount D2PAK
Trans IGBT Chip N-CH 390V 20A 150000mW 3-Pin(2+Tab) D2PAK Tube
IGBT Transistors IGBT 20A 350V N-CHANNEL
- Categories
- Transistors
- Manufacturer
- ON Semiconductor
- Veswin Part Number
- V1070-NGB8206ANSL3G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Apr 30 - May 05 (Choose Expedited Shipping)
- EDA / CAD Models
- NGB8206ANSL3G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Voltage Collector Emitter Breakdown Max
- 390V
- Vce on Max Vge Ic
- 1.9V @ 4.5V, 20A
- Unit Weight
- 0.079014 oz
- Test Condition
- 300V, 9A, 1 kOhm, 5V
- Td on off 25°C
- -/5μs
- Switching Energy
- -
- Supplier Device Package
- D2PAK
- Series
- NGB8206A
- Reverse Recovery Time trr
- -
- Power Max
- 150W
- Pd Power Dissipation
- 150 W
- Packaging
- Tube
- Package Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Style
- Through Hole
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Maximum Gate Emitter Voltage
- 15 V
- Input Type
- Logic
- IGBT Type
- -
- Gate Emitter Leakage Current
- 350 uA
- Gate Charge
- -
- Current Collector Pulsed Icm
- 50A
- Current Collector Ic Max
- 20A
- Continuous Collector Current at 25 C
- 20 A
- Collector Emitter Voltage VCEO Max
- 390 V
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- A: We Provide 90 days warranty for our product.
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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