The K6X4016C3F-TF70 from SAMSUNG manufacturer is a IC Chips with 256Kx16 bit Low Power full CMOS Static RAM. More details for K6X4016C3F-TF70 can be seen below.
The K6X4016C3F-TF70 is a 4 Megabit (Mb) Static Random-Access Memory (SRAM) manufactured by Samsung Electronics. SRAM is a type of memory that retains data as long as power is applied to the device, making it suitable for applications that require fast and efficient read and write access.
Capacity: 4 Megabits (Mb) or 512 Kilobytes (KB).
Organization: 256 Kilobits x 16 bits.
Speed: 70 nanoseconds (ns) access time, which determines how quickly data can be read from or written to the memory.
Low power consumption: SRAMs consume less power compared to dynamic memories like DRAM.
Operating voltage: Typically operates at 5 volts (V).
Package: 48-pin TSOP (Thin Small Outline Package) or other variants.
Cache memory: Used as cache memory in various computing systems to provide fast access to frequently used data.
Embedded systems: Commonly used in microcontrollers and other embedded systems where fast read and write access is required.
Communication devices: Used in networking equipment and communication devices for temporary data storage.
Industrial applications: Suitable for various industrial applications that require fast and reliable data access.
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