K4B1G1646G-BCH9000 SEC DDR

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  • K4B1G1646G-BCH9000

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  • Part Number
  • K4B1G1646G-BCH9000
  • Product Categories
  • DDR
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The K4B1G1646G-BCH9000 from SEC manufacturer is a DDR with DRAM Chip DDR3 SDRAM 1G-Bit 64MX16 1.5V 96-Pin FBGA - TRY. More details for K4B1G1646G-BCH9000 can be seen below.

Details

The K4B1G1646G-BCH9000 is a 1 Gigabit (Gb) DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Samsung. It is commonly used in various electronic devices, such as computers, servers, networking equipment, and other systems that require high-speed memory access.

Feature

Capacity: 1 Gigabit (Gb) or 128 Megabytes (MB).

Organization: 64 Megabits x 16 bits.

Speed: 9 nanoseconds (ns) clock cycle time (equivalent to 1,066 MHz data rate for DDR3 SDRAM).

Voltage: 1.5 volts (V) ± 0.075V.

Low power consumption: Operates at a lower voltage and consumes less power compared to earlier generation memories.

Package: 96-ball BGA (Ball Grid Array) package.


Application

Computers: Used in desktops, laptops, and servers to provide fast main memory for running applications and the operating system.

Networking equipment: Used in routers, switches, and other network devices to handle data packets efficiently.

Servers: Utilized in server systems for high-performance data processing and caching.

Communication devices: Used in smartphones, tablets, and other mobile devices for fast data access.

Categories
DDR
Manufacturer
SUCCESS ELECTRONICS CO
Veswin Part Number
V1518-K4B1G1646G-BCH9000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 30 - May 05 (Choose Expedited Shipping)
EDA / CAD Models
K4B1G1646G-BCH9000 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Supply Voltage
1.35V
Speed Grade
DDR3L-1866
Row Cycle Time
53.76 ns
Refresh Period
7.8 µs
Product Type
DDR3L SDRAM
Product Name
K4B1G1646G-BCH9000
Precharge Time
15 ns
Package Type
96-ball
Package
FBGA
Organization
128 Meg x 8
Operating Temperature Range
0°C to +95°C
Memory Type
DDR3L SDRAM
Memory Size
1 Gigabit
Memory Configuration
8 Banks x 128 Meg x 8
Manufacturer
Samsung
Features
Low Power Consumption, Burst Mode, Auto Precharge
Data Rate
1866 Mbps (DDR3L)
CAS Latency
13
Burst Length
8

SEC Inventory

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  • A: Yes, Our product technical engineer will help you with the K4B1G1646G-BCH9000 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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