The IXFN60N60 from IXYS manufacturer is a Module with N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage of 600V, resistance 75mΩ HiPerFET N-channel enhancement mode power MOSFET) ,MOSFET 600V 60A. The IXFN60N60 is N-Channel 600V 60A (Tc) 700W (Tc) Chassis Mount SOT-227B Trans MOSFET N-CH Si 600V 60A 4-Pin SOT-227B . More details for IXFN60N60 can be seen below.
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