IRLML2246TRPBF IR SOT-23-3 Transistors

IR
  • IRLML2246TRPBF

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  • Part Number
  • IRLML2246TRPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23-3
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The IRLML2246TRPBF from IR manufacturer is a FETs - Single with P CHANNEL POWER MOSFET, HEXFET, -20V, -2.6A, Transistor Polarity:P Channel, Continuous Drain Current Id:-2.6A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):0.09ohm, Rds(on) Test Voltage Vgs:-4.5V. The IRLML2246TRPBF is P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Micro3?/SOT-23 Trans MOSFET P-CH 20V 2.6A 3-Pin SOT-23 T/R MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl. More details for IRLML2246TRPBF can be seen below.

Details

P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Micro3?/SOT-23
Trans MOSFET P-CH 20V 2.6A 3-Pin SOT-23 T/R
MOSFET MOSFT PCh -20V -2.6A 135mOhm -2.5V cpbl
Categories
Transistors
Manufacturer
International Rectifier
Veswin Part Number
V1070-IRLML2246TRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 23 - Apr 28 (Choose Expedited Shipping)
EDA / CAD Models
IRLML2246TRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1.1V @ 10μA
Vgs th Gate Source Threshold Voltage
- 1.1 V
Vgs Gate Source Voltage
12 V
Vds Drain Source Breakdown Voltage
- 20 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
5.3 ns
Typical Turn Off Delay Time
26 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
Micro3?/SOT-23
Series
HEXFETR
Rise Time
7.7 ns
Rds On Max Id Vgs
135 mOhm @ 2.6A, 4.5V
Rds On Drain Source Resistance
157 mOhms
Qg Gate Charge
2.9 nC
Power Max
1.3W
Pd Power Dissipation
1.3 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
220pF @ 16V
Id Continuous Drain Current
- 2.6 A
Gate Charge Qg Vgs
2.9nC @ 4.5V
Forward Transconductance Min
3.4 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
16 ns
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
2.6A (Ta)
Configuration
Single

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  • A: We Provide 90 days warranty for our product.
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