IRFR5410TRPBF INFINEON TO-252-2 MOS Field Effect Transistors

INFINEON

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  • Part Number
  • IRFR5410TRPBF
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRFR5410TRPBF from INFINEON manufacturer is a FETs - Single with -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR5410TR with Lead Free Packaging on Tape and Reel. The IRFR5410TRPBF is P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak Trans MOSFET P-CH 100V 13A 3-Pin(2+Tab) DPAK T/R MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC. More details for IRFR5410TRPBF can be seen below.

Details

P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak
Trans MOSFET P-CH 100V 13A 3-Pin(2+Tab) DPAK T/R
MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
Categories
MOS Field Effect Transistors
Manufacturer
Infineon Technologies AG
Veswin Part Number
V107110-IRFR5410TRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 22 - Apr 27 (Choose Expedited Shipping)
EDA / CAD Models
IRFR5410TRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
4V @ 250μA
Vgs th Gate Source Threshold Voltage
- 4 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 100 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
15 ns
Typical Turn Off Delay Time
45 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
D-Pak
Series
HEXFETR
Rise Time
58 ns
Rds On Max Id Vgs
205 mOhm @ 7.8A, 10V
Rds On Drain Source Resistance
205 mOhms
Qg Gate Charge
38.7 nC
Power Max
66W
Pd Power Dissipation
66 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
760pF @ 25V
Id Continuous Drain Current
- 13 A
Gate Charge Qg Vgs
58nC @ 10V
Forward Transconductance Min
3.2 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
46 ns
Drain to Source Voltage Vdss
100V
Current Continuous Drain Id 25°C
13A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • Q: IRFR5410TRPBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRFR5410TRPBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRFR5410TRPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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