IHW40N60RF 12+ TO-247 Transistors

IHW40N60RF
  • IHW40N60RF

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  • Part Number
  • IHW40N60RF
  • Brand
  • 12+
  • Product Categories
  • IGBTs - Single
  • Package
  • TO-247
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The IHW40N60RF from 12+ manufacturer is a IGBTs - Single with powerful monolithic body diode with low forward voltage. The IHW40N60RF is IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body. More details for IHW40N60RF can be seen below.

Details

IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Categories
Transistors
Manufacturer
12+
Veswin Part Number
V1070-IHW40N60RF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On Apr 30 - May 05 (Choose Expedited Shipping)
EDA / CAD Models
IHW40N60RF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
600V
Vce on Max Vge Ic
2.4V @ 15V, 40A
Unit Weight
1.340411 oz
Test Condition
400V, 40A, 5.6 Ohm, 15V
Td on off 25°C
-/175ns
Switching Energy
560μJ (off)
Supplier Device Package
PG-TO247-3
Series
TrenchStopR
Reverse Recovery Time trr
-
Power Max
305W
Pd Power Dissipation
305 W
Part Aliases
IHW40N60RFFKSA1 IHW40N60RFXK SP000621080
Packaging
Tube
Package Case
TO-247-3
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 175 C
Maximum Gate Emitter Voltage
+/- 20 V
Input Type
Standard
IGBT Type
Trench
Gate Emitter Leakage Current
100 nA
Gate Charge
220nC
Current Collector Pulsed Icm
120A
Current Collector Ic Max
80A
Continuous Collector Current Ic Max
80 A
Continuous Collector Current at 25 C
80 A
Configuration
Single
Collector Emitter Voltage VCEO Max
600 V
Collector Emitter Saturation Voltage
1.85 V

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