The HGTG30N60A4D from FAIR-RITE manufacturer is a IGBTs - Single with IGBT 600V 75A 463W.
The HGTG30N60A4D is IGBT 600V 75A 463W Through Hole TO-247-3 Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3+Tab) TO-247 Tube IGBT Transistors 600V N-Channel IGBT SMPS Series. More details for HGTG30N60A4D can be seen below.
IGBT 600V 75A 463W Through Hole TO-247-3
Trans IGBT Chip N-CH 600V 75A 463000mW 3-Pin(3+Tab) TO-247 Tube
IGBT Transistors 600V N-Channel IGBT SMPS Series
- IGBT Tubes
- Veswin Part Number
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- Estimated Delivery Time
- On Jun 06 - Jun 11 (Choose Expedited Shipping)
- EDA / CAD Models
- HGTG30N60A4D by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Voltage Collector Emitter Breakdown Max
- Vce on Max Vge Ic
- 2.6V @ 15V, 30A
- Unit Weight
- 0.225401 oz
- Test Condition
- 390V, 30A, 3 Ohm, 15V
- Td on off 25°C
- Switching Energy
- 280μJ (on), 240μJ (off)
- Supplier Device Package
- Reverse Recovery Time trr
- Power Max
- Pd Power Dissipation
- 463 W
- Part Aliases
- Package Case
- TO-3P-3, SC-65-3
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Maximum Gate Emitter Voltage
- +/- 20 V
- Input Type
- IGBT Type
- Gate Emitter Leakage Current
- +/- 250 nA
- Gate Charge
- Current Collector Pulsed Icm
- Current Collector Ic Max
- Continuous Collector Current Ic Max
- 75 A
- Continuous Collector Current at 25 C
- 75 A
- Collector Emitter Voltage VCEO Max
- 600 V
- Collector Emitter Saturation Voltage
- 1.8 V
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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