The BSC120N03LS G from INFINEON manufacturer is a FETs - Single with N-Channel MOSFETs (20V…250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 12.0 mOhm; RDS (on) (max) (@4.5V): 16.5 mOhm; ID (max): 39.0 A;,MOSFET OptiMOS 3 N-CH 30V 39A 12mOhms.
The BSC120N03LS G is OptiMOS 3. More details for BSC120N03LS G can be seen below.
Details
OptiMOS 3
- Categories
- MOS Drive
- Manufacturer
- Infineon Technologies AG
- Veswin Part Number
- V7583-BSC120N03LS-G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- BSC120N03LS G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Typical Turn On Delay Time
- 2.7 ns
- Typical Turn Off Delay Time
- 12 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Tradename
- OptiMOS
- Technology
- Si
- Series
- OptiMOS 3
- Rise Time
- 2.2 ns
- Rds On Drain Source Resistance
- 12 mOhms
- Pd Power Dissipation
- 2.5 W
- Part Aliases
- BSC120N03LSGATMA1 BSC120N03LSGXT SP000302848
- Packaging
- Reel
- Package Case
- TDSON-8
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Id Continuous Drain Current
- 12 A
- Fall Time
- 2.2 ns
- Configuration
- Single Quad Drain Triple Source
- Channel Mode
- Enhancement
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A: Yes, Our product technical engineer will help you with the BSC120N03LS G pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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