The APT35GA90B from APTMICR manufacturer is a IGBTs - Single with High Speed PT IGBT.
The APT35GA90B is IGBT PT 900V 63A 290W Through Hole TO-247 [B] Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single. More details for APT35GA90B can be seen below.
Details
IGBT PT 900V 63A 290W Through Hole TO-247 [B]
Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
- Categories
- Transistors
- Manufacturer
- APTMICR
- Veswin Part Number
- V1070-APT35GA90B
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Apr 02 - Apr 07 (Choose Expedited Shipping)
- EDA / CAD Models
- APT35GA90B by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Voltage Collector Emitter Breakdown Max
- 900V
- Vce on Max Vge Ic
- 3.1V @ 15V, 18A
- Test Condition
- 600V, 18A, 10 Ohm, 15V
- Td on off 25°C
- 12ns/104ns
- Switching Energy
- 642μJ (on), 382μJ (off)
- Supplier Device Package
- TO-247 [B]
- Series
- POWER MOS 8?
- Reverse Recovery Time trr
- -
- Power Max
- 290W
- Packaging
- Tube
- Package Case
- TO-247-3
- Mounting Type
- Through Hole
- Input Type
- Standard
- IGBT Type
- PT
- Gate Charge
- 84nC
- Current Collector Pulsed Icm
- 105A
- Current Collector Ic Max
- 63A
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- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the APT35GA90B pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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